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| MAGNA TEC 25.0 +0.1 -0.15 BUZ907D BUZ908D MECHANICAL DATA Dimensions in mm P-CHANNEL POWER MOSFET 8.7 Max. 1.50 Typ. 11.60 0.3 10.90 0.1 POWER MOSFETS FOR AUDIO APPLICATIONS 30.2 0.15 O 20 M ax. 39.0 1.1 16.9 0.15 1 2 O 1.0 FEATURES * HIGH SPEED SWITCHING * SEMEFAB DESIGNED AND DIFFUSED * HIGH VOLTAGE (220V & 250V) * HIGH ENERGY RATING R 4.0 0.1 R 4.4 0.2 * ENHANCEMENT MODE * INTEGRAL PROTECTION DIODES * COMPLIMENTARY N-CHANNEL BUZ902D & BUZ903D Case - Source TO-3 Pin 1 - Gate Pin 2 - Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDSX Drain - Source Voltage VGSS ID ID(PK) PD Tstg Tj RJC Gate - Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction - Case @ Tcase = 25C BUZ907D -220V 14V -16A -16A 250W -55 to 150C 150C 0.5C/W BUZ908D -250V Magnatec. Telephone (01455) 554711. Fax (01455) 552612. Prelim. 01/97 MAGNA TEC Characteristic BVDSX BVGSS VGS(OFF) VDS(SAT)* RDS(on)* BUZ907D BUZ908D STATIC CHARACTERISTICS (Tcase = 25C unless otherwise stated) Test Conditions BUZ907D BUZ908D IG = 100A ID = -100mA ID = -16A ID = -16A VDS = -220V IDSX Drain - Source Cut-Off Current VGS = 10V BUZ907D VDS = -250V BUZ908D yfs* Forward Transfer Admittance VDS = -10V ID = -3A 0.7 4 S -10 mA ID = -10mA Gate - Source Breakdown Voltage VDS = 0 Gate - Source Cut-Off Voltage Drain - Source Saturation Voltage Static - Source Resistance VDS = -10V VGD = 0 VGS = -10 Min. -220 -250 14 -0.10 Typ. Max. Unit V V V Drain - Source Breakdown Voltage VGS = 10V -1.5 -12 0.75 -10 V V mA DYNAMIC CHARACTERISTICS (Tcase = 25C unless otherwise stated) Characteristic Ciss Coss Crss ton toff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Time Turn-off Time Test Conditions VDS = -10V f = 1MHz VDS = -20V ID = -5A Min. Typ. TBA TBA TBA TBA TBA Max. Unit pF ns * Pulse Test: Pulse Width = 300s , Duty Cycle 2%. D G S Magnatec. Telephone (01455) 554711. Fax (01455) 552612. Prelim. 01/97 |
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